{"id":32626,"date":"2023-09-22T14:42:00","date_gmt":"2023-09-22T12:42:00","guid":{"rendered":"https:\/\/fhi.nl\/nieuws\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/"},"modified":"2024-07-10T13:05:34","modified_gmt":"2024-07-10T11:05:34","slug":"mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules","status":"publish","type":"news","link":"https:\/\/fhi.nl\/en\/news\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/","title":{"rendered":"Mitsubishi Electric Develops SBD-embedded SiC MOSFET with New Structure for Power Modules"},"content":{"rendered":"<header id=\"header\" class=\"header header--low header--branch\">\n\n\t\n\t\t\t<div class=\"header__background header__background--graphic\"><\/div>\n\t\n\t<div class=\"container\">\n\t\t<div class=\"header__content\">\n\t\t\t<div class=\"header__first\">\n\n\t\t\t\t\n\t\t\t\t\n\t\t\t\t\n\t\t\t\t<h1 class=\"header__title\" >\n\t\t\t\t\tMitsubishi Electric Develops SBD-embedded SiC MOSFET with New Structure for Power Modules\t\t\t\t<\/h1>\n\n\t\t\t\t<div class=\"header__dots-line\">\n\t\t\t\t\t<svg width=\"431\" height=\"9\" viewbox=\"0 0 431 9\" fill=\"none\" xmlns=\"http:\/\/www.w3.org\/2000\/svg\"><path d=\"M430.799 4.192a1.136 1.136 0 1 1-2.272-.001 1.136 1.136 0 0 1 2.272 0Zm-27.272 0a1.135 1.135 0 1 1-2.27 0 1.135 1.135 0 0 1 2.27 0Zm-27.27 0a1.136 1.136 0 1 1-2.272-.001 1.136 1.136 0 0 1 2.272 0Zm-27.272 0a1.39 1.39 0 1 1-2.78 0 1.39 1.39 0 0 1 2.78 0Zm-27.78 0a1.645 1.645 0 1 1-3.29 0 1.645 1.645 0 0 1 3.29 0Zm-28.29 0a1.9 1.9 0 1 1-3.799 0 1.9 1.9 0 0 1 3.799 0Zm-28.799 0a2.154 2.154 0 1 1-4.308 0 2.154 2.154 0 0 1 4.308 0Zm-29.308 0a2.41 2.41 0 1 1-4.819 0 2.41 2.41 0 0 1 4.819 0Zm-29.819 0a2.663 2.663 0 1 1-5.326.001 2.663 2.663 0 0 1 5.326-.001Zm-30.327 0a2.919 2.919 0 1 1-5.837 0 2.919 2.919 0 0 1 5.837 0Zm-30.837 0a3.173 3.173 0 1 1-6.345.001 3.173 3.173 0 0 1 6.345 0Zm-31.346 0a3.428 3.428 0 1 1-6.856 0 3.428 3.428 0 0 1 6.856 0Zm-31.856 0a3.683 3.683 0 1 1-7.365 0 3.683 3.683 0 0 1 7.365 0Zm-32.365 0a3.937 3.937 0 1 1-7.875 0 3.937 3.937 0 0 1 7.875 0Zm-32.874 0a4.192 4.192 0 1 1-8.384 0 4.192 4.192 0 0 1 8.384 0Z\" fill=\"#FFF960\"\/><\/svg>\t\t\t\t<\/div>\n\n\t\t\t\t\n\t\t\t\t\n\t\t\t<\/div>\n\n\t\t\t\t\t\t\t<div class=\"header__second\">\n\n\t\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t\t\t\t\t\t\t<div class=\"header__branch-logos\">\n\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<img decoding=\"async\" src=\"https:\/\/fhi.nl\/app\/uploads\/2024\/02\/Industriele-elektronica.svg\" class=\"header__branch-logo\" alt=\"\" \/>\t\t\t\t\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t<\/div>\n\t\t\t\n\t\t<\/div>\n\t<\/div>\n<\/header>\n\n\t<div class=\"header__meta\">\n\t<div class=\"container\">\n\t\t<div class=\"header__meta__category\">\n\n\t\t\t\t\t\t\t<div class=\"header__meta__detail\">\n\t\t\t\t\t<div>Branch<\/div>\n\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<a href=\"https:\/\/fhi.nl\/en\/kennishub\/?_branches_kennishub=industriele-elektronica\" class=\"header__meta__detail--branch\">\n\t\t\t\t\t\t\t\tIndustrial Electronics\t\t\t\t\t\t\t<\/a>\n\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\n\t\t\t\t\t\t\t<div class=\"header__meta__detail\">\n\t\t\t\t\t<div>Subject<\/div>\n\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<a href=\"https:\/\/fhi.nl\/en\/kennishub\/?_onderwerp_kennishub=industriele-elektronica\" class=\"header__meta__detail--categorie\">\n\t\t\t\t\t\t\t\tIndustrial Electronics\t\t\t\t\t\t\t<\/a>\n\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\n\t\t<\/div>\n\t<\/div>\n<\/div>\n\n<div class=\"text bg--white\">\n\t<div class=\"container\">\n\t\t\t\t\t\t\t\t\t\t\t<div class=\"text__content text__content--1-col\">\n\t\t\t<p><a href=\"https:\/\/www.nijkerk-ne.com\/suppliers\/suppliers-for-passive-power-components\/mitsubishi-electric\/\">Mitsubishi Electric<\/a>\u00a0announced that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) embedded with a Schottky barrier diode (SBD), which the company has applied in a 3.3 kV full SiC power module, the FMF 800 DC -66 BEW for large industrial equipment such as railways and DC power systems. Samples started shipping on May 31 of this year. The chip&#039;s new structure is expected to help downsize railway traction systems, etc. as well as make them more energy efficient, and contribute to carbon neutrality through the increased adoption of DC power transmission.<\/p>\r\n<p>SiC power semiconductors are attracting attention with their capacity to significantly reduce power loss. Mitsubishi Electric, which commercialized SiC power modules equipped with SiC-MOSFETs and SiC-SBDs in 2010, has adopted SiC power semiconductors for a variety of inverter systems, including air conditioners and railways.The chip integrated with a SiC-MOSFET and a SiC- SBD can be mounted on a module more compactly compared to the conventional method of using separate chips, thus enabling smaller modules, larger capacity, and lower switching loss. It is expected to be widely used in large industrial equipment such as railways and electric power systems. Until now, the practical application of power modules with SBD-embedded SiC-MOSFETs has been difficult due to their relatively low surge-current capability, which results in the thermal destruction of the chips during surge-current events because surge currents in connected circuits concentrate only in specific chips.<\/p>\r\n<p>Mitsubishi Electric has now developed the world&#039;s first mechanism by which surge current concentrates on a specific chip in a parallel-connected chip structure inside a power module, and a new chip structure in which all chips start energizing simultaneously so that surge current is distributed throughout each chip. As a result, the power module&#039;s surge-current capacity has been improved by a factor of five or more compared to the company&#039;s existing technology, which is equal to or greater than that of conventional Si power modules, thus enabling the application of an SBD- embedded SiC MOSFET in a power module.<\/p>\r\n<p><img decoding=\"async\" src=\"https:\/\/www.nijkerk-ne.com\/wp-content\/uploads\/Chip-structure.webp\" alt=\"\" width=\"750\" height=\"394\" \/><\/p>\r\n<p>If you want more information or if you have any questions, please\u00a0<a href=\"https:\/\/www.nijkerk-ne.com\/contact\/\">contact Nijkerk Electronics<\/a>!<\/p>\t\t<\/div>\n\t<\/div>\n<\/div>\r\n\t<div class=\"articles bg--offwhite automatic\">\r\n\t\t<div class=\"container\">\r\n\t\t\t<div class=\"articles__header\">\r\n\t\t\t\t\t\t\t\t\t<div class='heading-wrapper'><svg width=\"13\" height=\"13\" viewbox=\"0 0 13 13\" fill=\"none\" xmlns=\"http:\/\/www.w3.org\/2000\/svg\"><circle cx=\"6.394\" cy=\"6.5\" r=\"6.394\" fill=\"#000\"\/><\/svg><h2>Related articles<\/h2><\/div>\t\t\t\t\t\t\t\t\t\t\t\t\t<a href=\"\/en\/profiel\/nijkerk-electronics\/\" class=\"button button--outline\">view profile<\/a>\r\n\t\t\t\t\t\t\t<\/div>\r\n\t\t\t\t\t\t<div class=\"post-grid post-grid--no-padding\">\r\n\t\t\t\t\n<a class=\"single-item single-item__articles\" href=\"https:\/\/fhi.nl\/en\/news\/tecnico-solar-boat-electronics-behind-the-boat\/\" data-id=\"33003\">\n\t<div class=\"single-item__articles-icon\">\n\t\t<svg width=\"35\" height=\"35\" viewbox=\"0 0 35 35\" fill=\"none\" xmlns=\"http:\/\/www.w3.org\/2000\/svg\">\n<mask id=\"mask0_1182_5532\" style=\"mask-type:luminance\" maskunits=\"userSpaceOnUse\" x=\"0\" y=\"0\" width=\"35\" height=\"35\">\n<path d=\"M0 0H35V35H0V0Z\" fill=\"white\"\/>\n<\/mask>\n<g mask=\"url(#mask0_1182_5532)\">\n<path d=\"M5.12695 9.22852H1.02539V31.9238H10.4299C12.2868 31.9238 14.0678 32.6615 15.3809 33.9746H19.6191C20.9322 32.6615 22.7132 31.9238 24.5701 31.9238H33.9746V11.2793H29.873\" stroke=\"#2A5CEE\" stroke-width=\"2\" stroke-miterlimit=\"10\"\/>\n<path d=\"M17.5 9.22852H18.1426C20.0088 7.89544 22.2237 7.17773 24.5615 7.17773H29.873V27.8223H24.5615C22.2237 27.8223 20.0088 28.54 18.1426 29.873H16.8574C14.9912 28.54 12.7763 27.8223 10.4385 27.8223H5.12695V5.12695H9.22852\" stroke=\"#2A5CEE\" stroke-width=\"2\" stroke-miterlimit=\"10\"\/>\n<path d=\"M9.22852 1.02539V21.6699C13.759 21.6699 17.5 25.3425 17.5 29.873V9.22852C17.5 4.698 13.759 1.02539 9.22852 1.02539Z\" stroke=\"#2A5CEE\" stroke-width=\"2\" stroke-miterlimit=\"10\"\/>\n<\/g>\n<\/svg>\n\t<\/div>\n\t<div class=\"single-item__articles-title\"><div class='heading-wrapper'><h3>T\u00e9cnico Solar Boat \u2013 Electronics behind the boat<\/h3><\/div><\/div>\n\t<div class=\"single-item__articles-terms\">\n\t\t\n\t\t\n\t\t\t\t\t\t<span class=\"button button--outline single-item__articles-term--branche single-item__articles-term\">Industrial Electronics<\/span>\n\t\t\t\t\t\t\t\t<span class=\"button button--outline single-item__articles-term--branche single-item__articles-term\">Design Automation &amp; Embedded Systems Event<\/span>\n\t\t\t\t\t\t\t\t<span class=\"button button--outline single-item__articles-term--branche single-item__articles-term\">Members content<\/span>\n\t\t\t\t\t<\/div>\n\t<div class=\"single-item__articles-author-date-wrapper\">\n\t\t\t\t\t<div class=\"single-item__articles-author\">\n\t\t\t\tEurocircuits NV\t\t\t<\/div>\n\t\t\t\t\t\t\t<div class=\"single-item__articles-date\">\n\t\t\t\tJuly 18, 2023\t\t\t<\/div>\n\t\t\t<\/div>\n<\/a>\n\n<a class=\"single-item single-item__articles\" href=\"https:\/\/fhi.nl\/en\/news\/speciale-actie-in-maart-30-korting-op-ets6-professional\/\" data-id=\"33734\">\n\t<div class=\"single-item__articles-icon\">\n\t\t<svg width=\"35\" height=\"35\" viewbox=\"0 0 35 35\" fill=\"none\" xmlns=\"http:\/\/www.w3.org\/2000\/svg\">\n<mask id=\"mask0_1182_5532\" style=\"mask-type:luminance\" maskunits=\"userSpaceOnUse\" x=\"0\" y=\"0\" width=\"35\" height=\"35\">\n<path d=\"M0 0H35V35H0V0Z\" fill=\"white\"\/>\n<\/mask>\n<g mask=\"url(#mask0_1182_5532)\">\n<path d=\"M5.12695 9.22852H1.02539V31.9238H10.4299C12.2868 31.9238 14.0678 32.6615 15.3809 33.9746H19.6191C20.9322 32.6615 22.7132 31.9238 24.5701 31.9238H33.9746V11.2793H29.873\" stroke=\"#2A5CEE\" stroke-width=\"2\" stroke-miterlimit=\"10\"\/>\n<path d=\"M17.5 9.22852H18.1426C20.0088 7.89544 22.2237 7.17773 24.5615 7.17773H29.873V27.8223H24.5615C22.2237 27.8223 20.0088 28.54 18.1426 29.873H16.8574C14.9912 28.54 12.7763 27.8223 10.4385 27.8223H5.12695V5.12695H9.22852\" stroke=\"#2A5CEE\" stroke-width=\"2\" stroke-miterlimit=\"10\"\/>\n<path d=\"M9.22852 1.02539V21.6699C13.759 21.6699 17.5 25.3425 17.5 29.873V9.22852C17.5 4.698 13.759 1.02539 9.22852 1.02539Z\" stroke=\"#2A5CEE\" stroke-width=\"2\" stroke-miterlimit=\"10\"\/>\n<\/g>\n<\/svg>\n\t<\/div>\n\t<div class=\"single-item__articles-title\"><div class='heading-wrapper'><h3>Special offer in March: 30% discount on ETS6 Professional<\/h3><\/div><\/div>\n\t<div class=\"single-item__articles-terms\">\n\t\t\n\t\t\n\t\t\t\t\t\t<span class=\"button button--outline single-item__articles-term--branche single-item__articles-term\">Building Automation<\/span>\n\t\t\t\t\t\t\t\t<span class=\"button button--outline single-item__articles-term--branche single-item__articles-term\">Members content<\/span>\n\t\t\t\t\t<\/div>\n\t<div class=\"single-item__articles-author-date-wrapper\">\n\t\t\t\t\t<div class=\"single-item__articles-author\">\n\t\t\t\tKNX Netherlands\t\t\t<\/div>\n\t\t\t\t\t\t\t<div class=\"single-item__articles-date\">\n\t\t\t\tMarch 1, 2023\t\t\t<\/div>\n\t\t\t<\/div>\n<\/a>\n\t\t\t<\/div>\r\n\t\t<\/div>\r\n\t<\/div>","protected":false},"excerpt":{"rendered":"","protected":false},"featured_media":32627,"template":"","branches":[13],"events":[9,60,8],"secretariat":[],"categories":[57],"themes_tax":[],"content_types":[514],"class_list":["post-32626","news","type-news","status-publish","has-post-thumbnail","hentry"],"acf":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v26.8 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Mitsubishi Electric Develops SBD-embedded SiC-MOSFET with New Structure for Power Modules<\/title>\n<meta name=\"description\" content=\"Mitsubishi Electric announced that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) embedded with a Schottky barrier diode (SBD)\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/\" \/>\n<meta property=\"og:locale\" content=\"en_GB\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Mitsubishi Electric Develops SBD-embedded SiC-MOSFET with New Structure for Power Modules\" \/>\n<meta property=\"og:description\" content=\"Mitsubishi Electric announced that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) embedded with a Schottky barrier diode (SBD)\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/\" \/>\n<meta property=\"og:site_name\" content=\"FHI, federatie van technologiebranches\" \/>\n<meta property=\"article:modified_time\" content=\"2024-07-10T11:05:34+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/fhi.nl\/app\/uploads\/news\/8ba7ca6aa49af2342f721b5d3e997f8f-3.3kv-sbs-embedded-sic-mosfet-module-2.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"1939\" \/>\n\t<meta property=\"og:image:height\" content=\"1292\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"WebPage\",\"@id\":\"https:\/\/fhi.nl\/nieuws\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/\",\"url\":\"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/\",\"name\":\"Mitsubishi Electric Develops SBD-embedded SiC-MOSFET with New Structure for Power Modules\",\"isPartOf\":{\"@id\":\"https:\/\/fhi.nl\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/#primaryimage\"},\"image\":{\"@id\":\"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/#primaryimage\"},\"thumbnailUrl\":\"https:\/\/fhi.nl\/app\/uploads\/news\/8ba7ca6aa49af2342f721b5d3e997f8f-3.3kv-sbs-embedded-sic-mosfet-module-2.jpg\",\"datePublished\":\"2023-09-22T12:42:00+00:00\",\"dateModified\":\"2024-07-10T11:05:34+00:00\",\"description\":\"Mitsubishi Electric announced that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) embedded with a Schottky barrier diode (SBD)\",\"breadcrumb\":{\"@id\":\"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/#breadcrumb\"},\"inLanguage\":\"en-GB\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/\"]}]},{\"@type\":\"ImageObject\",\"inLanguage\":\"en-GB\",\"@id\":\"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/#primaryimage\",\"url\":\"https:\/\/fhi.nl\/app\/uploads\/news\/8ba7ca6aa49af2342f721b5d3e997f8f-3.3kv-sbs-embedded-sic-mosfet-module-2.jpg\",\"contentUrl\":\"https:\/\/fhi.nl\/app\/uploads\/news\/8ba7ca6aa49af2342f721b5d3e997f8f-3.3kv-sbs-embedded-sic-mosfet-module-2.jpg\",\"width\":1920,\"height\":1279},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/fhi.nl\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Nieuws\",\"item\":\"https:\/\/fhi.nl\/nieuws\/\"},{\"@type\":\"ListItem\",\"position\":3,\"name\":\"Mitsubishi Electric Develops SBD-embedded SiC-MOSFET with New Structure for Power Modules\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/fhi.nl\/#website\",\"url\":\"https:\/\/fhi.nl\/\",\"name\":\"FHI, federatie van technologiebranches\",\"description\":\"Nederlandse branchevereniging voor technologiebranches\",\"publisher\":{\"@id\":\"https:\/\/fhi.nl\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/fhi.nl\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"en-GB\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/fhi.nl\/#organization\",\"name\":\"FHI, federatie van technologiebranches\",\"url\":\"https:\/\/fhi.nl\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"en-GB\",\"@id\":\"https:\/\/fhi.nl\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/fhi.nl\/app\/uploads\/2024\/06\/3-e1722349014385.png\",\"contentUrl\":\"https:\/\/fhi.nl\/app\/uploads\/2024\/06\/3-e1722349014385.png\",\"width\":732,\"height\":136,\"caption\":\"FHI, federatie van technologiebranches\"},\"image\":{\"@id\":\"https:\/\/fhi.nl\/#\/schema\/logo\/image\/\"},\"sameAs\":[\"https:\/\/www.linkedin.com\/company\/fhi-federation-of-technology-branches\",\"https:\/\/www.instagram.com\/fhi_nl\/\"]}]}<\/script>\n<!-- \/ Yoast SEO plugin. -->","yoast_head_json":{"title":"Mitsubishi Electric Develops SBD-embedded SiC MOSFET with New Structure for Power Modules","description":"Mitsubishi Electric announced that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) embedded with a Schottky barrier diode (SBD)","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/","og_locale":"en_GB","og_type":"article","og_title":"Mitsubishi Electric Develops SBD-embedded SiC-MOSFET with New Structure for Power Modules","og_description":"Mitsubishi Electric announced that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) embedded with a Schottky barrier diode (SBD)","og_url":"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/","og_site_name":"FHI, federatie van technologiebranches","article_modified_time":"2024-07-10T11:05:34+00:00","og_image":[{"width":1939,"height":1292,"url":"https:\/\/fhi.nl\/app\/uploads\/news\/8ba7ca6aa49af2342f721b5d3e997f8f-3.3kv-sbs-embedded-sic-mosfet-module-2.jpg","type":"image\/jpeg"}],"twitter_card":"summary_large_image","schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"WebPage","@id":"https:\/\/fhi.nl\/nieuws\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/","url":"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/","name":"Mitsubishi Electric Develops SBD-embedded SiC MOSFET with New Structure for Power Modules","isPartOf":{"@id":"https:\/\/fhi.nl\/#website"},"primaryImageOfPage":{"@id":"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/#primaryimage"},"image":{"@id":"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/#primaryimage"},"thumbnailUrl":"https:\/\/fhi.nl\/app\/uploads\/news\/8ba7ca6aa49af2342f721b5d3e997f8f-3.3kv-sbs-embedded-sic-mosfet-module-2.jpg","datePublished":"2023-09-22T12:42:00+00:00","dateModified":"2024-07-10T11:05:34+00:00","description":"Mitsubishi Electric announced that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) embedded with a Schottky barrier diode (SBD)","breadcrumb":{"@id":"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/#breadcrumb"},"inLanguage":"en-GB","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/"]}]},{"@type":"ImageObject","inLanguage":"en-GB","@id":"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/#primaryimage","url":"https:\/\/fhi.nl\/app\/uploads\/news\/8ba7ca6aa49af2342f721b5d3e997f8f-3.3kv-sbs-embedded-sic-mosfet-module-2.jpg","contentUrl":"https:\/\/fhi.nl\/app\/uploads\/news\/8ba7ca6aa49af2342f721b5d3e997f8f-3.3kv-sbs-embedded-sic-mosfet-module-2.jpg","width":1920,"height":1279},{"@type":"BreadcrumbList","@id":"https:\/\/www.nijkerk-ne.com\/mitsubishi-electric-develops-sbd-embedded-sic-mosfet-with-new-structure-for-power-modules\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/fhi.nl\/"},{"@type":"ListItem","position":2,"name":"Nieuws","item":"https:\/\/fhi.nl\/nieuws\/"},{"@type":"ListItem","position":3,"name":"Mitsubishi Electric Develops SBD-embedded SiC-MOSFET with New Structure for Power Modules"}]},{"@type":"WebSite","@id":"https:\/\/fhi.nl\/#website","url":"https:\/\/fhi.nl\/","name":"FHI, federation of technology industries","description":"Dutch trade association for technology industries","publisher":{"@id":"https:\/\/fhi.nl\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/fhi.nl\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"en-GB"},{"@type":"Organization","@id":"https:\/\/fhi.nl\/#organization","name":"FHI, federation of technology industries","url":"https:\/\/fhi.nl\/","logo":{"@type":"ImageObject","inLanguage":"en-GB","@id":"https:\/\/fhi.nl\/#\/schema\/logo\/image\/","url":"https:\/\/fhi.nl\/app\/uploads\/2024\/06\/3-e1722349014385.png","contentUrl":"https:\/\/fhi.nl\/app\/uploads\/2024\/06\/3-e1722349014385.png","width":732,"height":136,"caption":"FHI, federatie van technologiebranches"},"image":{"@id":"https:\/\/fhi.nl\/#\/schema\/logo\/image\/"},"sameAs":["https:\/\/www.linkedin.com\/company\/fhi-federation-of-technology-branches","https:\/\/www.instagram.com\/fhi_nl\/"]}]}},"_links":{"self":[{"href":"https:\/\/fhi.nl\/en\/wp-json\/wp\/v2\/news\/32626","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/fhi.nl\/en\/wp-json\/wp\/v2\/news"}],"about":[{"href":"https:\/\/fhi.nl\/en\/wp-json\/wp\/v2\/types\/news"}],"version-history":[{"count":0,"href":"https:\/\/fhi.nl\/en\/wp-json\/wp\/v2\/news\/32626\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/fhi.nl\/en\/wp-json\/wp\/v2\/media\/32627"}],"wp:attachment":[{"href":"https:\/\/fhi.nl\/en\/wp-json\/wp\/v2\/media?parent=32626"}],"wp:term":[{"taxonomy":"branches","embeddable":true,"href":"https:\/\/fhi.nl\/en\/wp-json\/wp\/v2\/branches?post=32626"},{"taxonomy":"events","embeddable":true,"href":"https:\/\/fhi.nl\/en\/wp-json\/wp\/v2\/events?post=32626"},{"taxonomy":"secretariat","embeddable":true,"href":"https:\/\/fhi.nl\/en\/wp-json\/wp\/v2\/secretariat?post=32626"},{"taxonomy":"categories","embeddable":true,"href":"https:\/\/fhi.nl\/en\/wp-json\/wp\/v2\/categories?post=32626"},{"taxonomy":"themes","embeddable":true,"href":"https:\/\/fhi.nl\/en\/wp-json\/wp\/v2\/themes_tax?post=32626"},{"taxonomy":"content_types","embeddable":true,"href":"https:\/\/fhi.nl\/en\/wp-json\/wp\/v2\/content_types?post=32626"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}