Plessey announced its commitment to being the first to market with a monolithic microLED based display based on GaN-on-Silicon. MicroLEDs are emerging as the only technology that can provide high luminance in a small format. They also commenced an extensive licensing programme that will see the company license out its GaN-on-Silicon expertise to microLED manufacturers in line with its new business strategy of becoming the photonic industry’s foremost technology platform provider.
· Plessey’s ground breaking IP protected GaN-on-Silicon supports the provision of next-generation products.
· Widely acknowledged as the route for monolithic addressable micro LED arrays/pixels for hi-res and hi-lum displays
· High brightness LEDs, microLED displays, power devices, UV LEDs, photonic integration, advanced sensors
· Plessey is creating compelling cutting edge display technology solutions, addressing the challenges and limitations faced in the field of photonics.
· Arrays with emitters as small as 1 micron.
· Driven at low current density for greater efficiency and longevity
· External Quantum Efficiency at least three times higher than best in class benchmarks with more improvements in the pipeline.
· Arrays that provide at least 100,000 nits at 1 watt, that’s TV equivalent brightness at only 5mW
· Coloured pixels fabricated in monolithic form.
· IP protected custom CMOS back plane provides rapid developments for custom arrays.
· GaN-on-Silicon out-perform competing technologies such as sapphire and OLEDs
· Outstanding thermal performance
· Focussed light emitting surface
· Monolithic die/array
· Lm/W maintenance
· Excellent uniformity
· Integrated electronic and optical components