Reliability of GaN HEMTs in power electronics

Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are an upcoming technology in the power electronics industry. GaN HEMTs allow for more efficient converters with higher power density through higher switching frequencies and lower conduction losses. These GaN HEMTs are already used in consumer devices such as AC adapters and have the potential to significantly impact other areas of power electronics. In this presentation we will discuss the operation of GaN HEMTs, the reliability challenges and the reliability implications for power electronics applications.

Speaker: Martijn Verhoeven – Eindhoven University of Technology.