Minimizing switching losses continues to be a major challenge for power device engineers working on SiC and GaN devices. The standard test method for measuring switching parameters and evaluating the dynamic behavior of Si, SiC, and GaN MOSFETs and IGBTs is the double pulse Test (DPT). Double pulse testing can be used to measure energy loss during device turn-on and turn-off, as well as reverse recovery parameters.
Mr. Sushil Vohra, Tektronix (on behalf of CN Rood)